Abstract
ABSTRACTHigh quality a-Si:H thin films with varied optical gaps in the range from 1.55 to 2.1 eV were fabricated by various methods, i.e., the standard RF glow discharge of silane, “Chemical Annealing” and ECR-H-plasma from SiCl2H2 under in situ monitoring with an ellipsome try. Despite marked differences in the local structure, all these films showed low defect density as low as (3–5) × 1015 cm3. In addition, the stability for light soaking was improved markedly for the films made by promoting intensively structural relaxation with atomic hydrogen.
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