Abstract
Hysteresis and commonly observed p-doping of graphene based field effect transistors (FETs) have been discussed in reports over the last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment is not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FETs in a moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FETs on a regular SiO2 substrate exhibit behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by a charge trapping mechanism associated with sensitivity of graphene to the local pH.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
