Rejecting incomplete charge-collection events in CdZnTe and other semiconductor detectors

Abstract

In an ideal single-carrier-type gamma ray detector, the amplitudes of the signals and the carrier drift times are correlated variables. However, if the charges produced by an incident photon are not fully collected, as is the case in CdZnTe detectors containing crystal defects, the above correlation does not hold. This permits the application of an event recognition algorithm to identify these incomplete charge collection (ICC) events, caused by the “bad” regions inside a detector, so that they can be removed from pulse height spectra. The ICC events primarily contribute to the Compton continuum and the low-energy tail of the photopeak. Thus, rejecting such events should not affect significantly the photopeak efficiency, but should improve the spectral response, e.g., the peak-to-Compton ratio, for a detector fabricated from material with relaxed crystal quality requirements. Such crystals are those currently available from vendors. The use of stronger ICC correlation-function rejection criteria can improve the energy resolution of these lower-quality crystals, but at the price of a loss in photoefficiency.