Abstract
Tb3+-doped TiO2 (TiO2:Tb3+) films are synthesized by a facile sol–gel method. The hot-electron current of Au/TiO2:Tb3+ Schottky diodes was enhanced by UV light decreasing the height of Schottky barrier. Compared with pure TiO2, doping Tb3+ can reduce the background current originating from the internal photoelectric effect in TiO2, and improve the on/off ratio. This is due to the energy and charge transfer mechanism from TiO2 to Tb3+. Photogenerated electrons in TiO2:Tb3+ films excited by UV light can be consumed by radiative electron transitions from the level 5D4 to the 7Fj (j = 6, 5, 4, 3) for Tb3+. This is beneficial and effective to regulate the electronic state of optoelectronic materials.
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