Abstract
The growth of high-quality tin-based perovskite films remains a grand challenge due to uncontrollable crystallization kinetics. Here, we report a facile strategy to realize an epitaxial-like growth of highly oriented tin-based perovskite films with the assistance of perovskite quantum dots (PQDs). Synchrotron-based in situ X-ray scattering results reveal that PQDs can act as nucleation centers to promote the growth of highly oriented perovskite crystals for both FASnI3 and MASnI3 systems. Remarkably, the degree of lattice strain can be readily modulated by tuning the lattice mismatch between various PQDs and bulk perovskites, thus reducing defect density and improving efficiencies. The efficiency of MASnI3 PSCs with PQDs has been pushed to 12.49%, which is the highest of this type reported so far. Furthermore, the film and device stability are enhanced owing to the improved film quality and the protection of hydrophobic ligands from PQDs.
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