Regulating electron traps of Eu2+-doped Ba1.6Ca0.4SiO4 persistent and optically stimulated luminescence phosphor toward optical data storage

Abstract

Nowadays, the optical data storage (ODS) has already become one of the most promising data storage technologies in this digital era. Optically stimulated luminescence (OSL) material has recognized as a considerable potential candidate for the new-generation ODS. The improvement of volatile memory performance and the increase of storage capacity are two critical challenges to be solved. In this work which is reporting on, a new novel Eu2+-doped orthosilicate phosphor has been studied showing both persistent luminescence and OSL. The trap density is significantly enhanced by 10-fold via Dy3+ codoping. Information can be reversibly written into the traps by UV light illumination and then read out by optical or thermal stimulus. The capture and release dynamics of electrons by traps are studied in detail to reveal the OSL-based ODS mechanism. Moreover, as a proof-of-concept, ODS flexible medium is fabricated using the as-obtained OSL material to certify the application feasibility for erasable optical data write-in and read-out.