Abstract
A set of slightly misoriented Si(11) wafers have been oxidized and annealed in different ways. After removal of the oxide the structure of the Si/SiO 2 interface has been studied by a high-resolution LEED system. The resulting LEED spots showed relatively sharp splitting for out-of-phase condition, indicating a nearly regular step array. The spot profiles are described precisely by a closed form terrace width distribution. The energy dependence of the spot profiles yields the vertical roughness of the samples. It can be shown that the selection of appropriate oxidation parameters decreases the deviations from the periodic structure.
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