Abstract
We address the enhancement of electron transport in semiconductor superlattices that occurs in combined electric and magnetic fields when cyclotron rotation becomes resonant with Bloch oscillations. We show that the phenomenon is regular in origin, contrary to the widespread belief that it arises through chaotic diffusion. The theory verified by simulations provides an accurate description of earlier numerical results and suggests new ways of controlling resonant transport.
Highlights
We address the enhancement of electron transport in semiconductor superlattices that occurs in combined electric and magnetic fields when cyclotron rotation becomes resonant with Bloch oscillations
We show that the phenomenon is regular in origin, contrary to the widespread belief that it arises through chaotic diffusion
The first description of electron drift in SLs [2] showed that the drift velocity vd vs the electric field F along a onedimensional SL possesses a peak at F 1⁄4 FET such that tB is equal to ts
Summary
We address the enhancement of electron transport in semiconductor superlattices that occurs in combined electric and magnetic fields when cyclotron rotation becomes resonant with Bloch oscillations. If the second condition fails, the peaks at multiple or rational frequencies are significant and/or the dynamics at the relevant time scales is chaotic. Scaled drift velocity vs the ratio between the Bloch and cyclotron frequencies: comparison of numerical calculations (5)–(7) (black thin solid line) and the asymptotic theory (10) (red thick dash-dotted line) for (a) θ 1⁄4 12°, (b) θ 1⁄4 20°.
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