Refractory Ohmic Contacts Formed by Electroless Deposition of Palladium and Nickel Onto N-InP

Abstract

ABSTRACTNi and Pd layers have been elaborated from chemical process on (100) oriented and 1018 doped n-InP substrates. The electrical and structural characteristics of these contacts have been investigated. Good refractory ohmic contacts were obtained by the annealing of these heterostructures. The ohmic quality of chemical contacts as well as those obtained with evaporated contacts is attributed to both the presence of crystallized compounds (NiP; Ni2P; PdIn3 and Pdln) and to superficial degenerescence of InP due to a phosphorus excess laying in the interphase.