Abstract
The thin-film properties of refractory metal silicides are reviewed along with related VLSI process technology. Material considerations, including thin-film deposition techniques, film structure, electrical properties, are covered. Single-level and composite gate structures implemented with these silicides are described. Thin-film processing-plasma etching, thermal oxidation, ion-beam-enhanced silicide formation, dopant implantation-of these materials is discussed from the perspective of VLSI compatibility. Characteristics of MOS devices and circuits using these silicides are reviewed.
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