Refractory and silicide gate metallisations for GaAs MESFET's

Abstract

Abstract Driven by the need for high device reliability in MESFET power transistors operating at elevated temperatures, and more recently the development of self-aligned gate structures, high stability contacts are being investigated in many laboratories. This paper will consider two classes of metallisations that have proved very promising. These include the refractory metals such as W, Ta and Ti together with the refractory silicides such as TaSi x TiSi x and WSi x . The work carried out in this area will be reviewed and appraised. The basic interface has been characterised by the use of RBS and SIMS studies. More recent studies have been concerned with the use of these results in the fabrication and evaluation of transistor structures.