Abstract
ABSTRACTThe author observed that both high-current-ion-beam and low-accelerationvoltage arsenic-implanted polycrystalline silicon-film surfaces are resistant to radical-fluorine-gas-etching. If we accept the simple assumption that a depth profile of concentration distribution of the implanted high-dose As atoms in polycrystalline Si film can be expressed with a standardized distribution function in the previous report of S. Furukawa, H. matsumura, and H. Ishiwara [Jpn. J. Appl. Phys. 11, 134 (1972)], we can take the premise that the chemical bonding reaction itself between radical-fluorine atoms and silicon atoms is prevented rather than that the covering of an arsenic- metal thin layer like amorphous state prevents the chemical bonding- reaction. We present a model of the prevention Si-F bond formation by high-dose arsenic implantation at low acceleration voltage. The model seems to be related to potential barrier increase and lattice vibration suppression for electromagnetic force-phonon interaction.
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