Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region

Mira Naftaly,Steve Chick,Ben Murdin,Guy Matmon

doi:10.3390/app11020487

Mira Naftaly, Steve Chick + Show 2 more

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https://doi.org/10.3390/app11020487

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Abstract

Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.

Highlights

We report in this work on measurements using Fourier-transform spectroscopy (FTS), which is especially useful due to its wide bandwidth and high frequency resolution
We demonstrate in this work how accurate refractive index values may be extracted from Fourier-transform spectrometer (FTS) transmission data by combining two calculation approaches, taking advantage of complementarity between different algorithms to overcome the limitations of the toolbox reported in our previous work, as explained below [14]
Si widely used cryogenic environments such as quantum research. This is the first report of refractive indices of Si and Ge at THz frequencies and at cryogenic temperatures

Summary

Introduction

Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz. Region. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Methods

Results

Conclusion