Refractive index of vacuum-evaporated SiO thin films: Dependence on substrate temperature

Abstract

The substrate temperature dependence of the IR refractive index of vacuum-evaporated silicon monoxide thin films is reported. This process parameter can control the refractive index of the samples provided that the other parameters (pressure, deposition rate, source temperature etc.) are maintained under reasonably constant conditions during the evaporation process. Our results demonstrate the possibility of obtaining SiO thin films with different and controlled refractive indices by controlling the substrate temperature. Also, a process temperature has been obtained at which no dispersion of the refractive index in the IR 1–5 μm range occurs.