Abstract
The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
