Abstract
The reflectivity dependence of the junction temperature rise, the total stimulated light power and the power efficiency in solution-grown GaAs junction lasers operated continuously at 77° K is studied. It is found that both the stimulated light output and the power efficiency can be maximised at a given current density by changing the laser reflectivity. It is also concluded that even when the laser diode is capable of with-standing a considerable rise in the junction temperature, the operation of the diode with a large biasing current above a certain level may prove not to be useful, as the junction heating will ultimately limit the stimulated light power.
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