Abstract
In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.
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