Reflection z‐scan measurements of opaque semiconductor thin films

Abstract

AbstractWe studied the nonlinear refraction of semiconductor thin films (3As2S3/As2Se3 and CdS) at the wavelength of 532 nm using the reflection z‐scan technique (RZ‐scan). The values of nonlinear refractive indices γ of 3As2S3/As2Se3 and CdS were calculated to be 5 × 10–10 cm2 W–1 and –5.2 × 10–11 cm2 W–1. The comparison of RZ‐scans and transmission z‐scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers–Kronig transformations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)