Abstract
The paper concentrates on the study of reflection characteristics of acoustodiffusive waves from the surface of a semiconductor halfspace which is subjected to stress free, isoconcentrated and stress free, impermeable conditions. The effect of life and relaxation times of charge carriers (electron or holes) fields on the wave characteristics is also investigated. The amplitude ratios (reflection coefficients) of reflected waves to that of incident wave are obtained for incident quasilongitudinal (qP), quasitransverse (qSV), and electron-(N) and hole (P) wave cases. The special cases of normal and grazing incidence are also derived and discussed. Finally, the numerical computations of reflection coefficients are carried out with the help of Gauss elimination method by using MATLAB programming software. The computer simulated results in respect of stress free conditions have been plotted graphically for silicon (Si) and presented in tabular form in case of germanium (Ge) semiconductors. The study may be useful in semiconductors and surface acoustic wave devices in addition to geophysical applications.
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