Reflection Layer Mediated Enhancement of Terahertz Radiation Utilizing Heavily-Doped InAs Thin Films

Abstract

We present the result of incorporating a heavily Si-doped InAs reflection layer into a terahertz emitting, InAs thin film based, structure. We demonstrate the increase of the radiated electric field intensity relative to a typical, n-type InAs bulk reference crystal using terahertz time domain spectroscopy (THz-TDS). With our approach more than a 2 fold increase in the electric field can be obtained. We compare our experimental findings with values obtained from calculations in the Drude model to obtain good agreement.