Abstract
Measurements have been made of the growth of In on GaAs(110) at two temperatures using reflection high-energy electron diffraction (RHEED). Growth occurs by 3D island formation. Island orientations, sizes, volumes, separations, and densities are extracted from the angular profiles of transmission diffraction beams from the In. The dose and temperature dependencies of these quantities are investigated. The growth microstructure is related to concepts of barrier formation. It is suggested that Fermi level pinning measurements in this system depend on band bending in the substrate laterally away from the edges of the island that are separated by the bare substrate.
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