Abstract
Reflection-high-energy-electron-diffraction (RHEED) intensity oscillations were used to monitor Si(111) growth during gas source molecular beam epitaxy using disilane. Intensity oscillations were measured as a function of both substrate temperature and disilane flow rate. Within the substrate temperature range of 490–560 °C where growth proceeded two dimensionally, well-defined intensity oscillations corresponding to bilayer growth could be observed along the [21̄1̄] and [11̄0] azimuths. The oscillation frequencies were found to increase with increasing substrate temperature as well as disilane flow rate. At lower temperatures where no dissociative adsorption of disilane occurred, intensity oscillations were not observed. At higher temperatures, growth entered the step flow regime and the intensity oscillations were weak or absent.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
