Abstract
Reflection high-energy electron diffraction intensity oscillations were observed for the first time during layer-by-layer growth of IV-VI compound semiconductors. Epitaxial PbSe and PbTe layers were grown by molecular beam epitaxy on cleaved BaF2 (111) at a substrate temperature range of 210–350 °C. The growth rate for both compounds was measured using in situ intensity oscillations, and was verified by stylus thickness measurements. Very little variation in growth rate was observed while varying the substrate temperature in this range.
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