Abstract
The redistribution of about (4–6) × 10 14 cm −2 atoms on the clean silicon (111) surface during the reversible (7 × 7) ς (1 × 1) transition has been revealed by the shift of monatomic steps and the change in size of two-dimensional sublimation and growth of islands. The results have been discussed together with the ellipsometric data indicating the presence of about 0.2 monolayer of adatoms on the Si(111)−(1 × 1) surface.
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