Abstract
The study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor halfspace underlying an inviscid liquid has been carried out. The reflection and transmission coefficients of reflected and transmitted waves have been obtained for quasi-longitudinal (qP) wave incident at the interface from fluid to semiconductor. The numerical computations of reflection and transmission coefficients have been carried out with the help of Gauss elimination method by using MATLAB programming for silicon (Si), germanium (Ge) and silicon nitride (Si3N4) semiconductors. In order to interpret and compare, the computer simulated results are plotted graphically. The study may be useful in semiconductors, seismology and surface acoustic wave (SAW) devices in addition to engines of the space shuttles.
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