Abstract
We report reflectance-difference spectroscopy characterization of AlxGa1—xN-compound layers grown on sapphire and 6H-SiC. We observe interference features below the bandgap, a derivative feature at the bandgap, and no signal or a broad feature above the bandgap. We present simulations of the data which are based on the assumption that the c-axis is tilted with respect to the surface normal, which results in an apparent bulk anisotropy in the hexagonal layers in normal-incidence reflectance measurements. We discuss implications with respect to a model by Tersoff [1], who suggested the formation of macrosteps during epitaxy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
