Reflectance dependencies of silicon trap detectors

Abstract

This work analyses the reflectance of silicon photodiodes as a function of incident beam polarization, angles of incidence and acceptance, and thickness of the passivating layer. The contributions of these effects to the polarization sensitivity of real trap devices are considered. An analytical model is used to calculate changes in responsivity due to polarization in traps with angular misalignments and traps constructed from different types of silicon photodiode. The results show that sensitivity to polarization should be considered when high-accuracy measurements are required.