Abstract
Reflectance anisotropy spectroscopy (RAS) has been employed in situ to investigate the overlayer growth of GaAs onto submonolayer to one monolayer coverages of Si δ layers deposited on the GaAs(001)-c(4×4) surface. The intensity of RAS features, thought to arise from the linear electro-optic (LEO) effect, is found to vary with both the number of atoms in the Si δ layer and the position of the δ plane from the GaAs surface. Self-consistent solutions to Poisson’s equation are made to calculate the electric field in the near-surface region of the samples. The results show a direct correlation between the LEO intensity and the surface field averaged over the penetration depth of the incident radiation, in confirmation of the LEO model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
