Abstract
Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600 °C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.
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