Refined RBS and AES techniques for the analysis of thin films used in photovoltaic devices

Abstract

AbstractThe analytical potential of refined RBS and AES techniques is demonstrated by two examples: (i) thin FeSi2 absorber layers on Si and (ii) TiNiAg multilayer contact structures. Both systems have prospects as components in photovoltaic cell devices. In the case of RBS, the refinement concerns an improved mass resolution achieved by applying projectile ions of higher masses (15N, 22Ne) at higher energies (up to 25 MeV). For AES the principal component analysis (PCA) formalism is adopted starting with a peak‐to‐peak height normalization of the relevant Auger peaks in the measured spectra. This evaluation procedure, which takes advantage of the chemical information inherent in the Auger line shape, gives depth profiles of the elements with respect to their chemical bonding state.