Abstract
We present a new approach to simulate the transport of charges across organic/organic layer interfaces in organic semiconductor devices. This approach combines the drift-diffusion formalism away from the interface with a hopping description of the charge transport in the vicinity of the interface. It has been implemented in the commercial software SETFOS allowing for fast simulations of the complete device. This new model takes into account both recombination and generation mechanisms across the interface enabling the modeling of charge-generation/recombination interfaces for the numerical simulation of tandem devices. Using this approach, it is also possible to simulate devices using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile as a hole-injection layer. This particular material has a very deep HOMO level (approximately 9.5 eV), which would seemingly prevent such a layer to be used as a hole-injection material in the framework of traditional drift-diffusion models.
Highlights
Organic light-emitting devices (OLEDs) are gaining ground as the technology for generation devices in display and lighting applications
One way to improve the lifetime1 of these devices is to build OLEDs in a tandem architecture,2 because tandem OLEDs require a lower electric current to achieve a certain luminance level compared to single-junction devices
The goal is for this junction to act as a charge-recombination interface (CRI) or as a charge-generation interface (CGI)
Summary
Organic light-emitting devices (OLEDs) are gaining ground as the technology for generation devices in display and lighting applications. The only attempt to perform a simulation of an organic tandem device was reported by Feiping et al. using a previously published model from Qi et al. to capture the physics of metal-oxide-based charge-generation units Their model is mainly based on the classical semiconductor theory and does not cope with the physics of organic/organic interfaces and with the hopping-transport mechanism, which is at the heart of recent developments of organic electronics.. It is coupled with the drift-diffusion formalism away from the interface, enabling fast simulations of complete devices while considering a charge-hopping model locally This approach has been implemented in the latest version of the semiconductor device simulation software SETFOS 4.613 by Fluxim AG, such that users can take advantage of state-of-the-art optical, electronic, and excitonic models. IV, we will demonstrate the simulation of tandem OLED and OPV devices using the drift-diffusion formalism combined with this new model
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