Reduction the leakage current through povidone-SiO2 nano-composite as a promising gate dielectric of FETs

Abstract

In the present study, povidone-SiO2 nano-composite dielectric film was introduced to replace SiO2 gate dielectric film. The organic and inorganic particles homogeneously dispersed in nano-composite film. The structure of nano-composite film was affected by annealing temperatures. By increase in annealing temperature up to 200 °C, wt% of carbon, oxygen and nitrogen increased and wt% of silicon decreased. At 240 °C, the organic phase desorbed and nano-composite structure degraded. The annealing temperature of 150 °C was suitable for adhesion between two phases. The cross-linked structure of dielectric film annealed at 150 °C led to decrease in leakage current.