Abstract
We report on the low temperature (≤1000 °C) vacuum sublimation behavior of e-beam evaporative deposited SiC film and a method to reduce the vacuum sublimation by an ion beam process. The density of SiC film deposited by e-beam evaporation method was ∼60% of the density of bulk source material. In this sample, we found that sublimation became appreciable above ∼750 °C under 1.5 × 10−5 torr pressure and the sublimation rate increased with increasing temperature, reaching ∼70 nm/h at 950 °C when the coated sample was heated for 5 h. When the film was irradiated with 70 keV N+ ions prior to heating, the sublimation rate decreased down to ∼23 nm/h at a fluence of 1 × 1017 ions/cm2. However, further increase in fluence beyond this value or extended heating period did not change (decrease or increase) the sublimation rate any more.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.