Abstract
A composite transistor consisting of a conventional transistor and a Schottky-barrier diode is proposed which has a very short saturation time constant τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s0</inf> . The measured τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s0</inf> of the composite transistor is reduced to ∼10 to 50 percent of that of the original transistor and is 1 ns at best.
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