Abstract
In this letter, we propose an effective route to reduce the cell-to-cell variability in 1T-1R-based random access memories (RRAM) arrays by combining the excellent switching performance of Hf 1-x Al x O y with an optimized incremental step pulse with verify algorithm for programming. The strongly reduced cell-to-cell variability improves the thermal and post-programming stability of the arrays, which is relevant for many applications of the RRAM technology. Finally, the retention study at 150 °C enables the prediction of the data storage capability.
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