Abstract
Cd1−xZnxTe crystals are annealed in Cd/Zn vapours to eliminate Te-rich phases. Duringthe saturated Zn partial pressure annealing and the high-temperature annealing under lowPZn,large Te-rich phases gather at the slice surface through thermo-migration. Thisprocess increased the stress in the bulk crystals and caused the formation ofdefects such as twins, stacking faults, and dislocations. The IR transmissionis greatly improved by annealing the slices under saturated PZn andthen removing a layer from the surface of the slices with a thickness of about 50μm.For Cd1−xZnxTe slices annealed at low temperature and low Zn partial pressure,the reduction of the Te-rich phases greatly depends on the diffusion of the atomicdefects.
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