Abstract
A magnetization switching method for magnetic random access memory (MRAM), recently proposed by Savtchenko et al. [U.S. Patent No. 6,545,906 (2003)], is known to have an important advantage of a wide window for bit writing over the conventional method based on the asteroid curve, but it has a serious problem of high switching fields. In an effort to solve this problem, the effects of the thickness asymmetry and antiferromagnetic exchange coupling of the synthetic antiferromagnetic free-layer structure on the switching field have been investigated by micromagnetic computer simulation. At conditions relevant to high-density MRAM, magnetization switching in the direct write mode occurs at reasonably low values of word- and bit-line fields (below 100Oe), combined with a substantially wide window for bit writing. A much wider window is observed in the toggle mode, but the required switching fields are too high, being over 150Oe.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
