Reduction of secondary defect formation in MeV As ion implanted Si(100)

Abstract

Secondary defect formation following 1 MeV As implantation in Si can be influenced by low-energy Si irradiation prior to annealing. The As dose ranged from 8 × 10 13 to 2 × 10 14/cm 2, in addition 150 keV Si was irradiated to doses varying from 3 × 10 13 to 1 × 10 15/cm 2. If the Si irradiation exceeds a dose of 1 × 10 14/cm 2 the formation of secondary defects near R p of the 1 MeV As ions was strongly reduced for an As dose of 1 × 10 14/cm 2 and even prevented for a dose of 8 × 10 13/cm 2. Above this Si dose residual defects form in the near-surface region which then act as sinks for interstitial-type defects caused by the MeV implant. This process is reversed if the MeV As implant is done at a dose of 2 × 10 14/cm 2.