Abstract
Thin ruthenium oxide film deposition on 100 nm SiO2 substrate by thermal atomic layer deposition (ALD) prior to ruthenium deposition. RuO2 was totally reduced to metallic Ru film when Ru deposition process with low oxygen partial pressure. Using this technique, we can improve overall deposition speed by reducing incubation time which is major problem of deposition Ru film. In addition, we compare properties of Ru film deposited by thermal ALD directly deposited on SiO2 substrate and Ru film obtained from reduction of RuO2 film. The Ru film from RuO2 has smoother surface RMS roughness than Ru film directly deposited on SiO2 substrate.
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