Abstract
Silicon is a preferred material in the design of medical imaging detectors. It enables reliable and inexpensive detectors to be produced. However, the operation of this material is compromised when irradiated with high radiation of more than 5 ×1014 particles/cm2of high energy neutrons. The defects caused transform the electrical properties. Therefore, this loss of information compromises the reconstruction of important events. This research paper aims to make a scientific contribution to the reduction of this radiation effects. The proposed solution is obtained by changing the silicon material generally used to design the detectors by a carbon nanotube material. The use of carbon nanotube material allows the detector to reduce the effects of radiation and leakage currents. A particular observation was made on the linear attenuation coefficient μ, the radiation length X0 and the width of the forbidden band Eg. Our results show the best characteristics for a carbon nanotube material compared to silicon. For a cross thermal section equal to σSi = σc = 2 ×10-3b ,the carbon linear attenuation coefficient is great her than the silicon (μSi = 9.979 ×10-5cm-1 <μC = 3.533 ×10-4cm-1), For a maximum effective cross section of equal diffusion σC = 1009 ×10-3b, (μSi = 0.503 ×10-3 cm-1 <μC = 1.732 ×10-3 cm-1), for a minimum effective cross section of equal diffusion σSi = σC = 10.09 ×10-3b, μSi = 0.503 ×10-3 cm-1 <μC = 1.732 ×10-3 cm-1. X0si = 22.009 g/cm2 and X0c= 42.969 g/cm2, Egsi= 1.2e.V and Egsi= 5.5e.V. From these results, the carbon material has an attenuation coefficient at least three times higher than that of the silicon material.
Highlights
With the progress of microelectronics, we are witnessing the improvement of the living conditions of human beings in several areas such as communication, transport, medicine (Lanzarotti, 1990; Bulletin, 1985; Lemoine, 2015) etc
Our results show the best characteristics for a carbon nanotube material compared to silicon
We propose in this article, the change of the silicon material generally used by a carbon nanotube material
Summary
With the progress of microelectronics, we are witnessing the improvement of the living conditions of human beings in several areas such as communication, transport, medicine (Lanzarotti, 1990; Bulletin, 1985; Lemoine, 2015) etc. The radiations resulting from the collision between the electromagnetic radiation and the matter very often affect the detector by its effects of radiations (Wunstorf, 1997; Claeys and Simoen, 2002) This subsequently leads to the deterioration of the sensors, modifying the information of the expected results. By virtue of its properties, diamond being essentially made up of carbon, we find that the latter is an excellent resistant to radiation (Besson, 2015; Bortolamiol, 2015) For this purpose, we propose in this article, the change of the silicon material generally used by a carbon nanotube material.
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