Abstract
A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate.
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