Abstract
A new type of silicon-on-insulator (SOI) structure was fabricated by using direct bonding technology to bury multilayered films consisting of poly-Si, Si/sub 3/N/sub 4/, and SiO/sub 2/. The cross-sectional structures were analyzed by using SIMS, micro-Raman spectroscopy, and spreading resistance methods. Both the area components and the perimeter components of the PN-junction leakage current were reduced more than 10 fold in structures that had a poly-Si interlayer just beneath the active-devices to act as a gettering site. The leakage current was a function of tensile strength in the SOI layer and was easily controlled with a suitable combination of interlayered insulators.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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