Abstract
We report here an effective reduction of photoscission of σ bonds in polysilanes by C60 doping. The temporal variation of photoluminescence in polysilanes has been measured as a function of a doping amount of C60. The results indicate that the photoscission of σ bonds is related to a photogenerated electron-hole pair rather than a hole or an electron. The energy released when the electron-hole pair recombines nonradiatively is more likely required in addition to the thermal energy to scissor σ bonds. The C60 doping does not affect the activation energy of the photoscission process but decreases the photoscission cross-section. It is also demonstrated that the photoluminescence quenching by the C60 doping is observed for polysilanes not only with aromatic side groups but also with saturated hydrocarbon side groups.
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