Reduction of on‐resistance in ion‐implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Abstract

AbstractSi ion‐implanted GaN/AlGaN/GaN HEMTs with extremely low gate leakage current and low source resistance prepared without any recess etching process are demonstrated. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on a sapphire substrate. After ion implantation into source/drain regions at an energy of 80 keV, the performance was significantly improved. The on‐resistance was reduced from 26.2 to 4.3 Ω‐mm. The saturation drain current and maximum trans‐conductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(6): 19–24, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10213