Abstract
The Cr/Pt/Au ohmic contact resistance on n-type gallium nitrogen (GaN) is reduced by the Cl2 inductively coupled plasma (ICP) surface treatment of n-type GaN films following laser lift-off (LLO). X-ray photoelectron spectroscopy (XPS) shows the modified atomic ratio of the n-type GaN surface following the Cl2 ICP treatment. The Cl2 ICP treatment increases the atomic ratio of gallium to nitrogen. GaClx and NClx are suggested to be generated and then removed using a boiling HCl solution. Nitrogen vacancies at the n-type GaN surface are therefore produced and act as donors for electrons, reducing ohmic contact resistance induced by reducing the resistivity of electrons to conduction.
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