Abstract
We found that the offset field (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) of a top-pinned magnetic tunnel junction (MTJ) with a CoPd/Ru/Ta/CoFeB-synthetic antiferromagnetic (SAF) free layer can be reduced by controlling the exchange coupling energy (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ex</sub> ) value. A micromagnetic simulation was used to derive the direct relation between the J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ex</sub> ) of a CoPd/Ru/Ta/CoFeB-SAF free layer and the H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) of a top-pinned MTJ with the SAF free layer. In addition, we found that the J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ex</sub> ) value can be controlled by changing the thickness of the Ta spacer between the CoPd and CoFeB layers. As a result, we fabricated a top-pinned MTJ with a SAF free layer that eliminated the offset field and made it possible to improve the thermal stability.
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