Abstract
Light-induced metastable defect creation has been studied in amorphous silicon germanium alloy (a-SiGe:H) materials prepared by using helium or hydrogen dilution in plasma enhanced chemical vapour deposition. From the study of comparison of light-induced degradation in electronic properties and defect density of helium-diluted alloy films with those of hydrogen-diluted a-SiGe:H, it has been revealed that not only the optical gap but also the microstructure of alloy films is responsible for light-induced degradation. Since helium-diluted alloy materials have a compact network and improved microstructure, they are more stable than hydrogen-diluted a-SiGe:H with the same optical gap. The temperature dependence of the mobility - lifetime product in the annealed state and the light-soaked state also shows that the creation of light-induced recombination centres in helium-diluted a-SiGe:H is lower than that in hydrogen-diluted alloy films.
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