Abstract
ABSTRACTA parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified that the internal stress changes from tension to compression as a function of supplied rf power density during deposition process. Supplied rf power density is closely connected to H o and SiH* optical emission intensity ratio (H α /SiH* ) of CVD plasma. Ve find that the internal stress can be reduced remarkably by controlling this ratio to 0.3. This H α/SiH* parameter has a superiority that the internal stress can be in situ controlled.
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