Abstract
Channel-hot-electron-generated substrate current was measured in MOSFETs with channel lengths down to 0.09 mu m, at room temperature and 77 K, and a reduction of the normalized substrate current was observed for very-short-channel devices. These devices were fabricated using X-ray lithography and had a nonuniformly doped channel. The reduction is attributed to nonlocal effects caused by the finite energy relaxation time. >
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