Abstract
Fluorine containing dry etch processes have been a cornerstone of semiconductor manufacturing since inception of the industry. Greenhouse gases (GHG) commonly used in device fabrication are CF4, C2F6, SF6, CHF3 and NF3. Texas Instruments Incorporated has been voluntarily pursuing GHG priorities aligned with ISO14001:2004, World Semiconductor Council and United States Environmental Protection Agency (1,2). This paper details manufacturing and unit process optimization to eliminate CHF3 in metal interconnect dry etch of an aluminum - copper analog 180nm technology node process flow in 200mm wafer volume production.
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